Infineon Technologies AG (FSE code: IFX / OTCQX code: IFNNY), a global leader in semiconductors for power systems and the Internet of Things, has launched the CoolGaN™ Drive HB 600 V G5 product series, further expanding its CoolGaN™ product portfolio. The four new products, IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M, all feature a half-bridge configuration and integrate two 600V gallium nitride (GaN) switches, along with high and low-side gate drivers and a self-boost diode, providing a compact and thermally optimized power stage. This series reduces the number of external components, alleviates the common PCB layout challenges of fast-switching GaN devices, helps designers shorten the development cycle, and simultaneously achieves the core advantages of GaN technology: higher switching frequency, lower switching and on-state losses, and higher power density. By integrating numerous key functions into an optimized package, this series reduces the number of external components, alleviates the common PCB layout problems of fast-switching GaN devices, and helps designers shorten the development cycle while realizing the core advantages of GaN technology. 

Infineon's CoolGaN™ Drive HB 600 V G5 product series further enhances the usability of gallium nitride through an integrated half-bridge solution. 

Johannes Schoiswohl, the head of the Gallium Nitride business line at Infineon Technologies, said: "GaN is transforming the field of power conversion. Infineon's mission is to help customers fully realize this transformation through scalable and user-friendly solutions. This newly launched integrated solution combines high-speed GaN performance, high integration, and reliability, enabling designers to accelerate the development process, reduce system size, and improve efficiency, breaking through the limits of compact power electronic products." 

This integrated half-bridge solution is designed for low-power motor drive systems and switching-mode power supplies. It enables the use of smaller magnetic and passive components, higher full-load efficiency and dynamic performance in space-constrained designs. This device is specifically tailored for high-speed precision systems, achieving ultra-fast switching with a propagation delay of only 98 ns, and having minimal mismatches. It maintains predictable timing performance while supporting efficient high-frequency operation. To simplify system integration, this solution provides PWM input compatible with standard logic levels, requiring only a single 12V gate drive power supply. Additionally, the fast UVLO recovery function helps ensure stability during startup and power transient events. To achieve excellent heat dissipation performance, this product adopts a 6×8 mm² TFLGA-27 bare pad package, enabling efficient heat dissipation in numerous application scenarios and supporting no heatsink design. 

These new solutions integrate the mature CoolGaN™ device technology, system-level integration capabilities, and profound power conversion expertise, further consolidating Infineon's leading position in the GaN market. This enables customers to adopt GaN technology more confidently and achieve large-scale application of efficient designs on industrial and consumer electronic platforms.