Infineon Technologies AG recently announced that Toyota, the world's largest automaker, has incorporated Infineon's CoolSiC™ MOSFET (silicon carbide power MOSFET) products into its new model bZ4X. This silicon carbide MOSFET is integrated into the on-board charger (OBC) and DC/DC converter. By leveraging the low loss, high temperature resistance, and high voltage resistance characteristics of silicon carbide materials, it can effectively extend the range of electric vehicles and shorten the charging time. 

The new Toyota bZ4X model incorporates Infineon's CoolSiC™ technology in the on-board charger and DC/DC converter. 

Peter Schaefer, Executive Vice President of Infineon Technologies and Chief Marketing Officer of the Automotive Business, said: "One of the world's largest car manufacturers, Toyota, has chosen Infineon's CoolSiC technology. We are extremely proud of this. Silicon Carbide can effectively enhance the range, efficiency and performance of electric vehicles, and will therefore play a significant role in shaping the future of transportation. Infineon is committed to innovation and promises zero-defect quality. It is fully prepared and ready to go, to meet the rapid growth in power electronic demand in the electric transportation sector." 

Infineon's CoolSiC™ MOSFET adopts a unique trench gate structure, which can reduce the normalized on-resistance and shrink the chip size, thereby minimizing on-state and switching losses and enhancing the efficiency of automotive on-board power systems. Additionally, the optimized parasitic capacitance and gate threshold voltage facilitate single-gate driver operation, which not only simplifies the driver circuit design of automotive electric drive systems but also supports the realization of high-density and high-reliability designs for on-board chargers and DC/DC converters.