According to reports, the CoWoS advanced packaging technology under Taiwan Semiconductor Manufacturing Company (TSMC) has achieved nearly 

perfect mass production yield, with a stable yield benchmark reaching 98%. The CoWoS-L variant can accommodate an equivalent 5.5 times the total bare 

chip area of standard masks (shutters or Reticles), corresponding to a silicon wafer area of approximately 858 square millimeters. Leveraging this 

technology, now a total silicon area of up to 4720 square millimeters of various chips can be integrated within a single package, with only 1% to 2% of the 

packaged products having process defects.

This advanced packaging technology has just entered the large-scale mass production stage this year, and this yield achievement holds significant industry 

significance. Although the CoWoS-L has previously been supplied in small batches, this year it has for the first time achieved stable and large-scale 

packaging of chips with 5.5 times the mask size.

This Taiwanese semiconductor giant is also developing larger-sized packaging solutions. In the future, it will launch an ultra-large CoWoS derivative 

solution that can accommodate the largest equivalent 14 times the standard mask bare chips within a single package, corresponding to an integrated 

silicon area of up to 12012 square millimeters. This technology is scheduled to be implemented in 2029, and at that time, TSMC's A13 process will also 

enter mass production simultaneously.

The delivery timelines for TSMC's production at each technology node can be fully met, and its wafer manufacturing and advanced packaging capacities 

remain in high demand. However, the industry also faces process challenges: when the bare chip size exceeds 3 times the mask size, thermal warping is 

prone to causing various mechanical structural defects. TSMC is continuously collaborating with customers to overcome these difficulties.

In addition to the CoWoS packaging system, TSMC is also vigorously promoting the iterative development of SoIC hybrid bonding technology. The 6-

micron bonding spacing SoIC process was achieved in large-scale mass production last year, and it is planned to reduce the bonding micro-protuberance 

spacing to 4.5 microns in 2029, which can be compatible with A14 process chip stacking. Compared to traditional interconnection solutions, SoIC 

interconnection density is increased by 50 times and energy efficiency is improved by 5 times. It is one of TSMC's core advanced packaging technology 

routes.