ON Semiconductor has officially launched its new GaNEXUS portfolio of gallium nitride (GaN) power devices. 

The initial products launched include GaNEXUS field-effect transistors (FET) samples covering the entire voltage range from 40V to 650V. Among them, the 650V GaNEXUS intelligent gallium nitride device integrates a complete set of protection functions, which can simplify the system integration design and enhance the overall reliability of the device. 

This series of devices has been optimized with a dedicated architecture. In high-power consumption application scenarios such as AI data centers, 48V power systems, robotics and industrial automation, as well as energy infrastructure, they can achieve higher energy efficiency, higher power density and better heat dissipation performance. 

Ameson's brand-new GaNEXUS series of gallium nitride power devices 

After integrating GaNEXUS into ON Semiconductor's intelligent power product matrix, the company can provide customized and optimized power solutions for various application scenarios, different voltage levels, and differentiated performance requirements. GaNEXUS, together with silicon-based devices and EliteSiC carbon-based silicon carbide devices, forms ON Semiconductor's complete power product system, enabling customers to flexibly balance performance, energy efficiency, heat dissipation characteristics, and total system cost within the entire power supply architecture. 

With the continuous iteration of AI computing infrastructure, transportation electrification, industrial automation, and energy systems, the demand for high-efficiency and miniaturized power architecture in the industry has surged. Hardware designers are facing increasing pressure in terms of power consumption control, thermal management, and overall machine volume constraints. Just for the AI data center alone, it is estimated that electricity consumption will account for 9% of the total electricity generation in the United States by 2030, and the costs of power supply and cooling can account for up to 40% of the total operating costs of the data center. 

Compared to traditional silicon-based power solutions, GaNEXUS addresses these pain points by offering faster switching speed, lower switching losses, higher power density, and superior heat dissipation performance. Leveraging these advantages, customers can reduce the size of magnetic components and heat dissipation devices, while improving the overall system efficiency and dynamic response speed, and reducing the overall hardware cost, whether it is for AI data center power supply, electric vehicle charging stations, or robot and industrial power systems. 

Antoine Yalarbel, Vice President of the Gallium Nitride Division of ON Semiconductor, said: "The GaNEXUS product series has opened up a new architectural approach for power system design. Currently, customers are generally seeking to achieve higher power output in a smaller space. This product provides engineers with ample design flexibility and breaks through the long-standing performance limitations of traditional power architectures." 

The GaNEXUS solution is specifically designed for the new generation of power conversion and power management systems. When combined with ON Semiconductor's Treo integrated platform (integrating sensing, control, protection, and power management functions), the two can form a complete system-level power solution, with comprehensive upgrades in intelligence, reliability, and robustness. This systematic delivery model can help customers reduce design complexity, shorten the R&D and certification cycles, and cut down on heat dissipation-related investment, achieving the optimal performance configuration throughout the entire power transmission chain. 

Benefits of applications in medium-low voltage scenarios (such as AI servers, 48V intermediate bus converter IBC, battery backup unit BBU, motor drives, etc.) 

The volume of the magnetic components has been reduced by approximately 30% to 60%. 

The power density has been increased to 1.5 to 2 times the original level. 

Depending on the different topological structures, the system efficiency can be improved by 0.5 to 2 percentage points. 

The switching loss has been reduced, while the heat dissipation performance and the stability of the loop control have been simultaneously optimized. 

Benefits of applying high-voltage scenarios (such as AI power supply frame, high-voltage DC-DC conversion, power factor correction PFC, LLC resonant power stage, etc.) 

The volume of magnetic components in high-frequency AC-DC and resonant circuits has been reduced by approximately 60%. 

The power density of the PFC, LLC, and high-voltage DC-DC architectures has been increased by 1.5 to 2 times compared to the original level. 

The system efficiency has been improved by 0.5 to 1 percentage point. After large-scale deployment, the heat dissipation and operation costs have significantly decreased. 

The device loss is reduced, and the internal thermal stress in the compact high-power system is alleviated. 

The GaNEXUS intelligent devices can reduce system design risks, simplify the development process of the power stage, accelerate the product certification progress, and ensure higher design reliability. 

The GaNEXUS devices all adopt enhanced heat dissipation packaging. The pin packaging follows the industry-standard pad layout, facilitating customers' alternative procurement from two suppliers. Optional packaging options include bottom heat dissipation using TOLL, top heat dissipation using TOLT, as well as double-sided heat dissipation packages of 3.3mm×3.3mm and 5mm×6mm.