PBSS4160PAN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA, 2V

Frequency - Transition :

175MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-UFDFN Exposed Pad

Power - Max :

510mW

Product Status :

Active

Supplier Device Package :

6-HUSON (2x2)

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

60V