NSTB60BDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

150mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 10V / 120 @ 5mA, 10V

Frequency - Transition :

140MHz

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

250mW

Product Status :

Active

Resistor - Base (R1) :

22kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

SC-88/SC70-6/SOT-363

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V