EMD29T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA, 500mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V / 140 @ 100mA, 2V

Frequency - Transition :

250MHz, 260MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

120mW

Product Status :

Active

Resistor - Base (R1) :

1kOhms, 10kOhms

Resistor - Emitter Base (R2) :

10kOhms

Supplier Device Package :

EMT6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50V, 12V