2N6028

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Programmable Unijunction

Current - Gate to Anode Leakage (Igao) :

10 nA

Current - Peak :

150 nA

Current - Valley (Iv) :

25 µA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation (Max) :

300 mW

Product Status :

Active

Voltage :

40V

Voltage - Offset (Vt) :

600 mV

Voltage - Output :

11V